unisonic technologies co., ltd ug25n45 preliminary npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2008 unisonic technologies co., ltd qw-r203-037.a n-channel insulated gate bipolar transistor ? description utc ug25n45 is an n-channel npn transistor. it can be used in strobe flash applications ? features * very high input impedance * very high pick current capability * gate drive: 4.5v ? symbol lead-free: ug25n45l halogen-free: ug25n45g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing UG25N45-TA3-T ug25n45l-ta3-t ug25n45g-ta3-t to-220 g c e tube
ug25n45 preliminary npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r203-037.a ? absolute maximum ratings parameter symbol ratings unit collector-emitter voltage v ceo 450 v gate-emitter voltage v geo 6 v pulsed gate-emitter current i gep 8 a pulsed collector current i cp 150 a power dissipation @ t c =25c p d 2.5 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient ja 50 /w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector-emitter satu ration voltage v ce(sat) v ge =4.5v, i cp =150a (pulsed) 6 8 v collector-emitter leakage current i ces v ce =450v, v ge =0 v 10 gate-emitter leakage current i ges v ge =6v, v ce =0v 10 ua on characteristics gate threshold voltage v ge(th) v ce =v ge , i c =250ua 0.35 1.2 v dynamic characteristics input capacitance c ies 2227 pf output capacitance c oes 200 pf reverse transfer capacitance c res v ge =0v, v ce =25v, f=1.0mhz 79 pf switching characteristics turn-on delay time t d(on) 11.5 ns turn-on rise time t r 24.5 ns turn-off delay time t d(off) 150 ns turn-off fall time t f v cc =225v, i c =50a, r g =25 ? , v ge =10v 3.3 ns total gate charge q g 64.5 nc gate-emitter charge q ge 7 nc gate-collector charge q gc v ce =360v, v ge =4.5v, i c =50a 30 nc
ug25n45 preliminary npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r203-037.a ? typical characteristics switching test circuit switching waveforms gate charge test circuit application test circuit utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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